Perovskites are promising candidates for the next generation of photovoltaic and lightemitting materials, with high power conversion and external quantum efficiencies. The further enhancement of perovskite-based device performance is related to reducing the density of trap states, which lead to non-radiative recombination or delayed photoluminescence, as well as complexify the recombination dynamics. There are many tools available to model recombination kinetics, but only a few of them can describe a complete physical picture of recombination process over several orders of excited carrier density. Therefore, it is crucial to evaluate the existing models and find the way to uncover the trap-related features in recombination dynamics, which are essential for trap density tracking during synthesis and device fabrication. For these purposes, trap density estimation through fully-optical measurement is an ideal tool due to noninvasive nature of material characterization. Moreover, the possibility to perform transient measurements with a sub-picosecond resolution provides an additional insight into carrier recombination at the very initial times after photoexcitation. In this study, the models for trap quantification in exciton-dominated and free carrierdominated recombination were proposed and explicitly verified. Experiments has been conducted to illustrate the applicability of these models, the corresponding experiment with FAPbBr3 (excitonic recombination) and MAPbI3 (free carrier recombination) thin films were conducted. The physical picture uncovered with these models has been discussed and cross-checked by using different experimental techniques. Finally, the measurements on device-like structure were performed and the impact of carrier transport layer on recombination pathways and trap density was unveiled.