In this thesis work, single crystal Cr2Te3 and MoS2 thin films are successfully grown by the Molecular Beam Epitaxial technique. Crystal structure characterizations and chemical composition analyses are done on these materials. Corresponding analyses are done to uncover their novel physical properties.
For Cr2Te3, Ferromagnetic ordering and Anti-ferromagnetic ordering competition is confirmed to co-exist in thin film samples. Perpendicular magnetic anisotropy effect is found on them. The Curie temperature of Cr2Te3 is enhanced by increasing the electron concentration and lengthening the c-lattice parameter of Cr2Te3. Curie temperature of Cr2Te3 grown on sapphire can be improved up to room temperature. The substrate plays a key role in changing carrier type in the thin film samples from holes to electrons. This work lays the material foundation for applications in magnetic devices based on Cr2Te3. Anomalous Hall effect is observed. The sign changing in the AHE loop at different temperatures is discussed in detail.
For MoS2, structural characterizations are done by X-Ray Diffraction and Transmission electron microscopy. The distance between the two characteristic peaks on its Raman spectra is widen due to strain effect from Al2O3 to triple layers MoS2.
